Oxygen precipitation in lightly and heavily doped Czochralski silicon

ECS Transactions

Volumn 3, Issue 4, 2006, Pages 71-87

  Sueoka, K ^a  

^a OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); OXYGEN; PRECIPITATION (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

CZOCHRALSKI SILICON; DEVICE PROPERTIES; DOPANT EFFECTS; OXYGEN PRECIPITATION;

SILICON COMPOUNDS;

EID: 33846985583     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355747     Document Type: Conference Paper

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