Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon

Journal of the Electrochemical Society

Volumn 146, Issue 6, 1999, Pages 2239-2244

  Ono, T ^a,b   Asayama, E ^b   Horie, H ^b   Hourai, M ^b   Sueoka, K ^b   Tsuya, H ^b   Rozgonyi, G A ^a  

^a North Carolina State University   (United States)

^b Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CRYSTAL GROWTH; HEAT TREATMENT; MORPHOLOGY; OXIDES; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

CZOCHRALSKI SILICON WAFERS; OXIDE PRECIPITATES;

SILICON WAFERS;

EID: 0032628901     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391921     Document Type: Article

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