Dependence of mechanical strength of Czochralski silicon wafers on the temperature of oxygen precipitation annealing

Journal of the Electrochemical Society

Volumn 144, Issue 3, 1997, Pages 1111-1120

  Sueoka, Koji ^a   Akatsuka, Masanori ^a   Katahama, Hisashi ^a   Adachi, Naoshi ^b  

^a Sumitomo Metal Industries Ltd   (Japan)

^b SUMCO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE EFFECTS; PRECIPITATION (CHEMICAL); STRENGTH OF MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

CZOCHRALSKI SILICON WAFERS; POLYHEDRAL PRECIPITATES; SLIP DISLOCATIONS; WARPAGES;

SILICON WAFERS;

EID: 0031095658     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837541     Document Type: Article

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