Internal gettering for Ni contamination in Czochralski silicon wafers

Journal of the Electrochemical Society

Volumn 147, Issue 8, 2000, Pages 3074-3077

  Sueoka, Koji ^a   Sadamitsu, Shinsuke ^a   Koike, Yasuo ^a   Kihara, Takayuki ^a   Katahama, Hisashi ^a  

^a Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; ETCHING; GETTERS; IMPURITIES; INTERDIFFUSION (SOLIDS); NICKEL DEPOSITS; PRECIPITATION (CHEMICAL); X RAY CRYSTALLOGRAPHY;

CZOCHRALSKI SILICON WAFERS; ISOTHERMAL ANNEALING;

SILICON WAFERS;

EID: 0034246366     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393857     Document Type: Article

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