First principles calculation for point defect behavior, oxygen precipitation and Cu gettering in czochralski silicon

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 365-372

  Sueoka, K ^a   Shiba, S ^a   Fukutani, S ^a  

^a OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

Cu gettering; Czochralski silicon; First principles calculation; Oxygen precipitation; Point defect

Indexed keywords

CRYSTAL GROWTH FROM MELT; EPITAXIAL FILMS; OXYGEN; PRECIPITATION (CHEMICAL); SILICON WAFERS;

CZOCHRALSKI SILICON; FIRST PRINCIPLES CALCULATIONS; OXYGEN PRECIPITATION;

POINT DEFECTS;

EID: 85087578707     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/3-908451-13-2.365     Document Type: Conference Paper

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