Effect of heavy boron doping on oxygen precipitation in Czochralski silicon substrates of epitaxial wafers

Journal of the Electrochemical Society

Volumn 147, Issue 2, 2000, Pages 756-762

  Sueoka, Koji ^a,c   Akatsuka, Masanori ^a   Mitsuharu Yonemura, A ^b   Ono, Toshiaki ^b   Asayama, Eiichi ^a   Katahama, Hisashi ^a  

^a Siimitomo Metal Industries Limited   (Japan)

^b Electronics Engineering Laboratories   (Japan)

^c Research and Development Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI SILICON SUBSTRATE; EPITAXIAL WAFER; PRECIPITATE DENSITY;

ANNEALING; BORON; ETCHING; NUCLEATION; OXYGEN; SEMICONDUCTOR DOPING; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

PRECIPITATION (CHEMICAL);

EID: 0034140153     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393266     Document Type: Article

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