Defect formation behaviors in heavily doped czochralski silicon

ECS Transactions

Volumn 2, Issue 2, 2006, Pages 95-107

  Sugimura, Wataru ^a   Ono, Toshiaki ^a   Umeno, Shigeru ^a   Hourai, Masataka ^a   Sueoka, Koji ^b  

^a SUMCO CORPORATION   (Japan)

^b OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CRYSTAL DEFECTS; CRYSTAL GROWTH; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON;

OXIDE PRECIPITATION; VOID DEFECTS; VOID FORMATION;

CRYSTAL GROWTH FROM MELT;

EID: 33745511243     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2195652     Document Type: Conference Paper

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