Vacancy-assisted oxygen precipitation phenomena in Si

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 129-136

  Falster, R ^a   Pagani, M ^a   Gambaro, D ^a   Cornara, M ^a   Olmo, M ^a   Ferrero, G ^a   Pichler, P ^b   Jacob, M ^b,c  

^a MEMC Electronic Materials SpA   (Italy)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

Nucleation; Oxygen; Rapid Thermal Annealing; Vacancies

Indexed keywords

ALUMINUM NITRIDE; NUCLEATION; OXYGEN; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SURFACE TREATMENT; VACANCIES; ANNEALING; CRYSTAL GROWTH FROM MELT; REACTION KINETICS;

CZ SILICON; EXPERIMENTAL EVIDENCE; LOW TEMPERATURES; NUCLEATION PROCESS; OXYGEN PRECIPITATES; OXYGEN PRECIPITATION; THERMAL NITRIDATION; VACANCY CONCENTRATION;

OXYGEN VACANCIES; SILICON WAFERS;

OXYGEN PRECIPITATES;

EID: 16944362759     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.129     Document Type: Article

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