Defects limiting minority carrier lifetime in 4H-SiC epilayers

ECS Transactions

Volumn 3, Issue 5, 2006, Pages 19-28

  Klein, P B ^d   Shanabrook, B V ^a   Huh, S W ^d   Polyakov, A Y ^d   Skowronski, M ^b   Sumakeris, J J ^d   O'Loughlin, M J ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRONIC STRUCTURE; HOLE TRAPS; PHOTOLUMINESCENCE; SEMICONDUCTOR DIODES; SILICON CARBIDE;

DEFECTS CONTROLLING CARRIERS; DIODE STRUCTURES; EPILAYERS; HOLE CAPTURE;

CARRIER CONCENTRATION;

EID: 33846970600     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2357192     Document Type: Conference Paper

References (28)

1. L. Storasta, J.P. Bergman, C. Hallin and E. Janzen, Mater. Sci. Forum 389-393, 549 (2002).
2. J.Zhang, L. Storasta, J.P. Bergman, N.T. Son and E. Janzen, J. Appl. Phys. 93, 4708 (2003).
3. T.Tawara, H. Tsuchida, S. Izumi, I. Kamata and K. Izumi, Mater. Sci. Forum 457-460, 565 (2004).
4. H.Fujiwara, K. Danno, T. Kimoto, T. Tojo and H. Matsunami, J. Cryst. Growth 281, 370 (2005).
5. Y. Negoro, T. Kimoto and H. Matsunami, Appl. Phys. Lett. 85, 1716 (2004).
6. G. Alfieri, E.V. Monakhov, B.C. Svensson and M.K. Linnarsson, J. Appl. Phys. 98, 043518 (2005).
7. L. Storasta, J.P. Bergman, E. Janzen, A. Henry and J.Lu, J. Appl. Phys. 96, 4909 (2004).
8. T. Dalibor, G. Pensl, T. Kimoto, H. Matsunami, S. Sridhara, R. P. Devaty and W.J. Choyke, Diamond Relat. Mater. 6, 1333 (1997).
9. H.J. v. Bardeleben and J.L. Cantin, Mater. Sci. Forum 353-356, 513 (2001).
10. A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshauser and H. Itoh, Appl. Phys. Lett., 79 3950 (2001).
11. I. Pintilie, L. Pintilie, K. Irmscher and B. Thomas, Appl. Phys. Lett., 81, 4841 (2002).
12. T.A.G. Eberlein and R. Jones Phys. Rev. Lett., 90, 225502 (2003).
13. A. Castaldini, A. Cavallini and L. Rigutti, Semicond. Sci. Tech., 21, 724 (2006).
14. C. Litton, D. Johnstone, S. Akarca-Biyikli, K.S. Ramalah, I. Bhat, T.P. Chow, J.K. Kim and E.F. Schubert, Appl. Phys. Lett. 88, 121914 (2006).
15. N.Y. Garces, W.E. Carlos, S.W. Huh, H.J. Chung, S. Nigam, A.Y. Polyakov and M. Skowronski, Mater. Sci. Forum, in press (2006).
16. C. Hemmingsson, N.T. Son, O. Kordina, J.P. Bergman, E. Janzen, J.L. Lindstrom, S. Savage, and N. Nordell, J. Appl. Phys. 81, 6155 (1997).
17. D.V. Lang, J. Appl. Phys. 45, 3023 (1974).
18. G.M. Martin, A. Mittonneau, D. Pons, A. Mircea and D.W. Woodard, J. Phys. C 13, 3855 (1980).
19. W. Schockley and W.T. Read, Phys. Rev. 87, 835 (1952).
20. R.N. Hall, Phys. Rev. 87, 387 (1952).
21. G.K. Wertheim, Phys. Rev. 109, 1086 (1958).
22. D.J. Sandiford, Phys. Rev. 105, 524 (1952).
23. B.C. Streetman, J. Appl. Phys. 37, 3137 (1966).
24. A. Hangleiter, Phys. Rev. B 35, 9149 (1987).
25. F. Berz and H.K. Kuiken, Solid State Electron., 19 437 (1976).
26. M. Boulou and D. Bois, J. Appl. Phys. 48, 4713 (1977).
27. P. Grivickas, J. Linnros, and V. Grivickas, Mater. Sci. Forum 338-342, 671 (2000).
28. The (0/+) signal for up to 2V forward bias is inferred from the (-/+) signal, as their signal strengths are precisely in the ratio of 1:2, corresponding to one or two electrons (Ref. 16).