Free carrier diffusion measurements in epitaxial 4H-SiC with a Fourier transient grating technique: Injection dependence

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Grivickas, Paulius ^a   Linnros, Jan ^a   Grivickas, Vytautas ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFUSION; ELECTRON ABSORPTION; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; HALL EFFECT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

EINSTEIN RELATION; FOURIER TRANSIENT GRATING TECHNIQUES; HALL MOBILITY;

SEMICONDUCTING FILMS;

EID: 12944312825     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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