Assessment of the intrinsic nature of deep level Z1/Z 2 by compensation effects in proton-irradiated 4H-SiC

Semiconductor Science and Technology

Volumn 21, Issue 6, 2006, Pages 724-728

  Castaldini, A ^a   Cavallini, A ^a   Rigutti, L ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPLEXATION; ELECTRIC POTENTIAL; HYDROGEN; IRRADIATION; MATHEMATICAL MODELS; NITROGEN; SILICON CARBIDE;

CHARGE DENSITY; COMPENSATION PHENOMENA; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); DOPANTS;

PROTONS;

EID: 33646765758     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/6/002     Document Type: Article

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