Annealing effects on AlGaN/GaN HEMTs employing excimer laser pulses

Electrochemical and Solid-State Letters

Volumn 8, Issue 12, 2005, Pages

  Ha, Min Woo ^a   Lee, Seung Chul ^a   Her, Jin Cherl ^a   Seo, Kwang Seok ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; EXCIMER LASERS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LASER PULSES; TRANSCONDUCTANCE;

DRAIN CURRENT; INTERFACE DEFECTS; PEAK EXTRINSIC TRANSCONDUCTANCE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 28044459659     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2116187     Document Type: Article

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