Alignment of Ge nanoislands on Si(111) by Ga-induced substrate self-patterning

Physical Review Letters

Volumn 98, Issue 6, 2007, Pages

  Schmidt, Th ^a   Flege, J I ^a   Gangopadhyay, S ^a   Clausen, T ^a   Locatelli, A ^b   Heun, S ^b,c   Falta, J ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b SINCROTRONE TRIESTE   (Italy)

^c LABORATORIO TASC   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; NUCLEATION; SELF ASSEMBLY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS;

GE NANOISLANDS; PATTERN FORMATION; SELF-PATTERNING; SURFACE CHEMICAL POTENTIAL;

NANOSTRUCTURED MATERIALS;

EID: 33846956781     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.066104     Document Type: Article

References (26)

1. G. Abstreiter, Semicond. Sci. Technol. 11, 1521 (1996). SSTEET 0268-1242 10.1088/0268-1242/11/11S/012
2. J. Konle, Solid-State Electron. SSELA5 0038-1101 45, 1921 (2001). 10.1016/S0038-1101(01)00234-9
3. A. Hirai and K.M. Itoh, Physica (Amsterdam) E23, 248 (2004). PELNFM 1386-9477 10.1016/j.physe.2003.12.130
4. O.G. Schmidt, Appl. Phys. Lett. 77, 4139 (2000). APPLAB 0003-6951 10.1063/1.1326842
5. Z. Zhong, Physica (Amsterdam) E23, 243 (2004). PELNFM 1386-9477 10.1016/j.physe.2003.11.277
6. A. Ronda and I. Berbezier, Physica (Amsterdam) E23, 370 (2004). PELNFM 1386-9477 10.1016/j.physe.2003.12.136
7. E.V. Pedersen, Surf. Sci. Lett. 399, L351 (1998). SUSCAS 0039-6028 10.1016/S0039-6028(98)00039-9
8. J. Tersoff, C. Teichert, and M.G. Lagally, Phys. Rev. Lett. 76, 1675 (1996). PRLTAO 0031-9007 10.1103/PhysRevLett.76.1675
9. C. Teichert, Phys. Rev. B PRBMDO 0163-1829 53, 16334 (1996). 10.1103/PhysRevB.53.16334
10. K. Sakamoto, Thin Solid Films 321, 55 (1998). THSFAP 0040-6090 10.1016/S0040-6090(98)00443-X
11. A. Portavoce, Thin Solid Films 380, 164 (2000). THSFAP 0040-6090 10.1016/S0040-6090(00)01494-2
12. I. Berbezier, A. Ronda, A. Portavoce, and N. Motta, Appl. Phys. Lett. 83, 4833 (2003). APPLAB 0003-6951 10.1063/1.1633012
13. B. Voigtländer, A. Zinner, T. Weber, and H.P. Bonzel, Phys. Rev. B PRBMDO 0163-1829 51, 7583 (1995). 10.1103/PhysRevB.51.7583
14. L. Simon, Phys. Rev. B PRBMDO 0163-1829 64, 035306 (2001). 10.1103/PhysRevB.64.035306
15. O.G. Schmidt, Appl. Phys. Lett. 71, 2340 (1997). APPLAB 0003-6951 10.1063/1.120072
16. D. Dentel, J. Appl. Phys. 93, 5069 (2003). JAPIAU 0021-8979 10.1063/1.1562747
17. J. Falta, M. Copel, F.K. LeGoues, and R.M. Tromp, Appl. Phys. Lett. 62, 2962 (1993). APPLAB 0003-6951 10.1063/1.109157
18. T. Schmidt, Surf. Rev. Lett. 5, 1287 (1998). SRLEFH 0218-625X 10.1142/S0218625X98001626
19. A. Locatelli, J. Phys. IV (France) JPICEI 1155-4339 104, 99 (2003).
20. Th. Schmidt, New J. Phys. 7, 193 (2005). NJOPFM 1367-2630 10.1088/1367-2630/7/1/193
21. J. Falta, Th. Schmidt, A. Hille, and G. Materlik, Phys. Rev. B PRBMDO 0163-1829 54, R17288 (1996). 10.1103/PhysRevB.54.R17288
22. R.M. Tromp and M.C. Reuter, Phys. Rev. B PRBMDO 0163-1829 47, 7598 (1993). 10.1103/PhysRevB.47.7598
23. F.M. Ross, J. Tersoff, and R.M. Tromp, Phys. Rev. Lett. 80, 984 (1998). PRLTAO 0031-9007 10.1103/PhysRevLett.80.984
24. H. Omi and T. Ogino, Thin Solid Films 369, 88 (2000). THSFAP 0040-6090 10.1016/S0040-6090(00)00841-5
25. A. Sgarlata, Appl. Phys. Lett. 83, 4002 (2003). APPLAB 0003-6951 10.1063/1.1626260
26. B. Voigtländer and A. Zinner, Appl. Phys. Lett. 63, 3055 (1993). APPLAB 0003-6951 10.1063/1.110256