Ordering of germanium islands in the Si1-xGex/Si system pre-structured by misfit dislocations

Surface Science

Volumn 399, Issue 2-3, 1998, Pages

  Pedersen, E V ^a   Shiryaev, S Yu ^a,b   Jensen, F ^a   Lundsgaard Hansen, J ^b   Petersen, J W ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

Atomic force microscopy; Electron microscopy; Epitaxy; Germanium; Growth; Self assembly; Silicon; Silicon germanium

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; KINETIC THEORY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GRADED BUFFER LAYERS; SILICON GERMANIDE;

SEMICONDUCTOR GROWTH;

EID: 0032024361     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00039-9     Document Type: Article

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