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Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 24, 1996, Pages R17288-R17291

Surfactant adsorption site and growth mechanism of Ge- on Ga-terminated Si(111)

(4) Falta, J a Schmidt, T a Hille, A a Materlik, G a

a DESY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005313114 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.54.R17288 Document Type: Article

Times cited : (31)

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