Atomistic simulations of epitaxial recrystallization in 4H-SiC along the [0 0 0 1] direction

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 255, Issue 1 SPEC. ISS., 2007, Pages 136-140

  Gao, F ^a   Zhang, Y ^a   Devanathan, R ^a   Posselt, M ^b   Weber, W J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Computer simulations; Defects; Epitaxial recrystallization; Silicon carbide

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); MOLECULAR DYNAMICS; PHASE TRANSITIONS; RECRYSTALLIZATION (METALLURGY);

AMORPHOUS LAYERS; DISLOCATION LOOPS; EPITAXIAL RECRYSTALLIZATION;

SILICON CARBIDE;

EID: 33846925501     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.11.016     Document Type: Article

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