Nanostructurale nature of the porous GaAs layer formed on p+-GaAs substrate by electrochemical anodization

Microelectronics Journal

Volumn 37, Issue 8, 2006, Pages 783-785

  Beji, L ^a   Missaoui, A ^a   Fouzri, A ^a   Ouada, H Ben ^a   Maaref, H ^a   Bouazizi, A ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Anodization; Porous GaAs; Quantum confinement

Indexed keywords

DOPING (ADDITIVES); ELECTROCHEMISTRY; NANOSTRUCTURED MATERIALS; OXIDATION; PHOTOLUMINESCENCE; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION;

ANODIZATION; PHOTOLUMINESCENCE SPECTROSCOPY (PL); POROUS GAAS; QUANTUM CONFINEMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33744543010     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.10.003     Document Type: Article

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