Structural and photoluminescence properties of porous GaP formed by electrochemical etching

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Tomioka, Katsuhiro ^a   Adachi, Sadao ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL TRANSITION MODEL; POROUS MORPHOLOGY; SPECTROSCOPIC ELLIPSOMETRY; SURFACE ORIENTATION;

ELECTROCHEMISTRY; ELLIPSOMETRY; ETCHING; LOW TEMPERATURE EFFECTS; MORPHOLOGY; PHOTOLUMINESCENCE; POROSITY; SCANNING ELECTRON MICROSCOPY; SURFACE CHEMISTRY;

GALLIUM COMPOUNDS;

EID: 27144530665     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2076445     Document Type: Article

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