|
Volumn 80, Issue 6, 2002, Pages 1085-1087
|
Stability of field emission current from porous n-GaAs(110)
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANODIC ETCHING;
FIELD ELECTRON EMISSIONS;
FIELD EMISSION CURRENTS;
FOWLER-NORDHEIM;
HCL SOLUTION;
ONSET VOLTAGES;
POROUS GAAS;
RESIDUAL GAS;
RESIDUAL GAS PRESSURE;
SPECTROSCOPIC INVESTIGATIONS;
STABLE FIELDS;
X-RAY PHOTOELECTRONS;
BEHAVIORAL RESEARCH;
ELECTRON EMISSION;
FIELD EMISSION;
GALLIUM ARSENIDE;
HYDROCHLORIC ACID;
ION BOMBARDMENT;
SEMICONDUCTING GALLIUM;
X RAY PHOTOELECTRON SPECTROSCOPY;
CURRENT VOLTAGE CHARACTERISTICS;
|
EID: 79956010736
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1436535 Document Type: Article |
Times cited : (16)
|
References (16)
|