Photoluminescence from structural defects in GaN

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 440-443

  Reshchikov, M A ^a,e   Jasinski, J ^b   Liliental Weber, Z ^b   Huang, D ^a,c   He, L ^a   Visconti, P ^a,d   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c FUDAN UNIVERSITY   (China)

^d CNR   (Italy)

^e VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

GaN; Photoluminescence; Structural defects

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EXCITONS; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS;

GALLIUM NITRIDE;

EID: 0346686016     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.030     Document Type: Conference Paper

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