Mobility in semiconducting carbon nanotubes at finite carrier density

Nano Letters

Volumn 6, Issue 2, 2006, Pages 205-208

  Perebeinos, Vasili ^a   Tersoff, J ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; FERMI VELOCITY; GATE VOLTAGE; HOLE DENSITY;

CARRIER MOBILITY; ELECTRIC FIELDS; ELECTRON TRANSITIONS; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; THERMAL EFFECTS;

CARBON NANOTUBES;

CARBON NANOTUBE;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; ELECTRON; FLOW KINETICS; METHODOLOGY; MOTION; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; SURFACE PROPERTY; TEMPERATURE;

ELECTROMAGNETIC FIELDS; ELECTRONS; MOTION; NANOTECHNOLOGY; NANOTUBES, CARBON; PARTICLE SIZE; RHEOLOGY; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY; SURFACE PROPERTIES; TEMPERATURE;

EID: 33644886664     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl052044h     Document Type: Review

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