Blue and green emission using In(Ga)N/GaN quantum wells with InN well layers grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 299, Issue 2, 2007, Pages 282-287

  Kong, Bo Hyun ^a   Kim, Dong Chan ^a   Cho, Hyung Koun ^a   Lee, Kyu Han ^b   Kim, Je Won ^b   Kim, Bong Jin ^c  

^a Sungkyunkwan University   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

^c NINEX Co Ltd   (South Korea)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; INDIUM COMPOUNDS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES;

BLUESHIFT; GREEN EMISSION; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33846840744     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.211     Document Type: Article

References (28)

1. Chichibu S., Azuhata T., Sota T., and Nakamura S. Appl. Phys. Lett. 69 (1996) 4188
2. Narukawa Y., Kawakami Y., Funato M., Fujita S., and Nakamura S. Phys. Rev. B 55 (1997) R1938
3. Teo K.L., Colton J.S., Yu P.Y., Weber E.R., Li M.F., Liu W., Uchida K., Tokunaga H., Akutsu N., and Matsumoto K. Appl. Phys. Lett. 73 (1998) 1697
4. Cho H.K., Lee J.Y., Sharma N., Humphreys C.J., Yang G.M., Kim C.S., Song J.H., and Yu P.W. Appl. Phys. Lett. 79 (2001) 2594
5. Crowell P.A., Yong D.K., Keller S., Hu E.L., and Awschalom D.D.A. Appl. Phys. Lett. 72 (1998) 927
6. Chichibu S.F., Abare A.C., Minsky M.S., Keller S., Fleischer S.B., Bowers J.E., Hu E., Mishra U.K., Coldren L.A., DenBaars S.P., and Sota S. Appl. Phys. Lett. 73 (1998) 2006
7. Bai J., Wang T., and Sakai S. J. Appl. Phys. 88 (2000) 4729
8. Nardell M.D., Rapcewic K., and Bernhol J. Appl. Phys. Lett. 71 (1997) 3135
9. Bai J., Wang T., and Sakai S. J. Appl. Phys. 90 (2001) 1740
10. Cho H.K., Lee J.Y., Kim C.S., Yang G.M., Sharma N., and Humphreys C. J. Crystal Growth 231 (2001) 466
11. Smeeton T.M., Kappers M.J., Barnard J.S., Vickers M.E., and Humphreys C.J. Appl. Phys. Lett. 83 (2003) 5419
12. Narukawa Y., Kawakami Y., Funato M., Fujita S., Fujita S., and Nakamura S. Appl. Phys. Lett. 70 (1997) 981
13. Chichibu S., Wada K., and Nakamura S. Appl. Phys. Lett. 71 (1997) 2346
14. Schuster M., Gervais P.O., Jobst B., Hsler W., Averbeck R., Riechert H., Iberl A., and Stmmer R. J. Phys. D: Appl. Phys. 32 (1999) A56
15. O'Dennell K.P., Mosselmans J.F., Martin R.W., Pereira S., and White M.E. J. Phys.: Condens. Matter 13 (2001) 6977
16. Pelli A., Saarinen K., Tuomisto F., Ruffenach S., and Briot O. Appl. Phys. Lett. 89 (2006) 011911
17. Wu J., Walukiewicz W., Yu K.M., Ager III J.W., Haller E.E., Lu H., and Schaff W.J. Appl. Phys. Lett. 80 (2002) 4741
18. Liboff R.L. Introductory Quantum Mechanics. second ed (1993), Addison-Wesley Publishing Company, New York (Chapter 8)
19. Chen C.-C., Chuang H.-W., Chi G.-C., Chuo C.-C., and Chyi J.-I. Appl. Phys. Lett. 77 (2000) 3758
20. Yeo Y.C., Chong T.C., and Li M.F. J. Appl. Phys. 83 (1998) 1429
21. Wetzel C., Takeuchi T., Yamaguchi S., Katoh H., Amano H., and Akasaki I. Appl. Phys. Lett. 73 (1998) 1994
22. Boutros K.S., McIntosh F.G., Roberts J.C., Bedair S.M., Piner E.L., and El-Masry N.A. Appl. Phys. Lett. 67 (1995) 1856
23. Takeuchi T., Wetzel C., Yamaguchi S., Sakai H., Amano H., Akasaki I., Kaneko Y., Nakagawa S., Yamaoka Y., and Yamada N. Appl. Phys. Lett. 73 (1998) 1691
24. Cho Y.-H., Gainer G.H., Fischer A.J., Song J.J., Keller S., Mishra U.K., and DenBaars S.P. Appl. Phys. Lett. 73 (1998) 1370
25. Shapiro N.A., Perlin P., Kisielowski C., Mattos L.S., Yang J.W., and Weber E.R. MRS Internet J. Nitride Semicond. Res. 5 (2000) 1
26. Zheng X.H., Chen H., Yan Z.B., Li D.S., Yu H.B., Huang Q., and Zhou J.M. J. Appl. Phys. 96 (2004) 1899
27. Narukawa Y., Niki I., Izuno K., Yamada M., Murazaki Y., and Mukai T. Jpn J. Appl. Phys. 41 Part 2 (2002) L371
28. Cho H.K., Kim D.C., Kong B.H., Lee K.H., Oh J.T., Kim S.W., Kim D.J., Kim J.W., and Hong S.K. J. Crystal Growth 281 (2005) 349