Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN:In multiple quantum wells grown on Si(111)

Nanotechnology

Volumn 18, Issue 1, 2007, Pages

  Wu, Jiejun ^a   Zhang, Guoyi ^a   Liu, Xianglin ^b   Zhu, Qinsheng ^b   Wang, Zhanguo ^b   Jia, Quanjie ^c   Guo, Liping ^c  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; ULTRAVIOLET RADIATION;

BARRIER LAYERS; CRYSTALLINE QUALITY; INTERFACIAL ABRUPTNESS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33846834039     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/1/015402     Document Type: Article

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