Crack control in GaN grown on silicon (1 1 1) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

Optical Materials

Volumn 28, Issue 10, 2006, Pages 1227-1231

  Wu, Jiejun ^a   Han, Xiuxun ^a   Li, Jiemin ^a   Wei, Hongyuan ^a   Cong, Guangwei ^a   Liu, Xianglin ^a   Zhu, Qinsheng ^a   Wang, Zhanguo ^a   Jia, Quanjie ^b   Guo, Liping ^b   Hu, Tiandou ^b   Wang, Huanhua ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Cracks; GaN; In doping; LT AlGaN interlayer; Metalorganic chemical vapor deposition; Si(1 1 1) substrate

Indexed keywords

CRACK INITIATION; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; SURFACE ACTIVE AGENTS; X RAY DIFFRACTION;

CRACK DENSITY; CRYSTAL QUALITY; FLOW RATES; HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD);

GALLIUM NITRIDE;

EID: 33646830612     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2005.08.004     Document Type: Article

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