Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

Nanotechnology

Volumn 17, Issue 5, 2006, Pages 1251-1254

  Wu, Jiejun ^a   Li, Jiemin ^a   Cong, Guangwei ^a   Wei, Hongyuan ^a   Zhang, Panfeng ^a   Hu, Weiguo ^a   Liu, Xianglin ^a   Zhu, Qinsheng ^a   Wang, Zhanguo ^a   Jia, Quanjie ^b   Guo, Liping ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; INDIUM ALLOYS; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING;

LOW TEMPERATURE PHOTOLUMINESCENCE (LT-PL); MICRO-RAMAN SPECTRA; QUATERNARY ALLOYS;

NANOSTRUCTURED MATERIALS;

EID: 33144473093     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/17/5/015     Document Type: Article

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