Recombination dynamics of a 268 nm emission peak in Al 0.53in0.11Ga0.36N/Al0.58in 0.02Ga0.40N multiple quantum wells

Applied Physics Letters

Volumn 88, Issue 11, 2006, Pages

  Onuma, T ^a,b   Keller, S ^d   DenBaars, S P ^d   Speck, J S ^d   Nakamura, S ^d   Mishra, U K ^d   Sota, T ^c   Chichibu, S F ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; INDIUM ALLOYS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; POLARIZATION; STRAIN;

EXCITON LOCALIZATION; MOLAR FRACTION; RECOMBINATION DYNAMICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33645141495     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2186109     Document Type: Article

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