SCOPUS 정보 검색 플랫폼

Volumn 406, Issue 1-3, 1998, Pages 48-56

Strain state in semiconductor quantum dots on surfaces: A comparison of electron microscopy and finite element calculations

(4) Carlsson, A a Wallenberg, L R a Persson, C a Seifert, W a

a LUND UNIVERSITY (Sweden)

Author keywords

Electron microscopy; Epitaxy; Gallium phosphide; Growth; Indium phosphide; Self assembly; Semiconductor semiconductor thin film structures; Single crystal epitaxy

Indexed keywords

ELECTRON MICROSCOPY; EPITAXIAL GROWTH; FINITE ELEMENT METHOD; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STRAIN; STRAIN MEASUREMENT; SURFACE STRUCTURE; THIN FILMS;

GALLIUM PHOSPHIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032073029 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00084-3 Document Type: Article

Times cited : (15)

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