Three-dimensional mapping of the strain anisotropy in self-assembled quantum-wires by grazing incidence x-ray diffraction

Applied Physics Letters

Volumn 85, Issue 16, 2004, Pages 3581-3583

  Gutierrez H R ^a   Magalhaes Paniago R ^b,c   Bortoleto, J R R ^a   Cotta, M A ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^c LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; MAPPING; MONOLAYERS; NANOSTRUCTURED MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE X RAY DIFFRACTION; SELF ASSEMBLED QUANTUM WIRES; STRAIN ANISOTROPY; THREE-DIMENSIONAL MAPPING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 9744244222     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808493     Document Type: Article

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