Analytical model for the impact of the twin gate on the floating-body-related low-frequency noise overshoot in silicon-on-insulator MOSFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3118-3127

  Lukyanchikova, Nataliya ^a,b   Garbar, Nikolay ^b   Smolanka, Alexander ^b   Kudina, Valeriya ^b   Claeys, Cor ^a,c,d   Simoen, Eddy ^c  

^a IEEE   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c IMEC   (Belgium)

^d Katholieke Universiteit Leuven   (Belgium)

Author keywords

Back gate induced (BGI) noise; Linear kink effect (LKE); Lorentzian noise; Silicon on insulator (SOI); Twin gate (TG) transistor

Indexed keywords

BACK GATE INDUCED (BGI) NOISE; LINEAR KINK EFFECT (LKE); LORENTZIAN NOISE; TWIN GATE (TG) TRANSISTORS;

LORENTZ FORCE; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

GATES (TRANSISTOR);

EID: 33846627042     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885546     Document Type: Article

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