Liquid-injection MOCVD of ZrO2 thin films using zirconium bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor

Chemical Vapor Deposition

Volumn 12, Issue 5, 2006, Pages 295-300

  Thomas, Reji ^b   Milanov, Andrian ^a   Bhakta, Raghunandan ^a   Patil, Urmila ^a   Winter, Manuela ^a   Ehrhart, Peter ^b   Waser, Rainer ^b   Devi, Anjana ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

High k dielectrics; Malonates; Metal organic precursors; MOCVD; ZrO2

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; AMIDES; ANNEALING; COORDINATION REACTIONS; CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; DYES; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SWITCHING CIRCUITS; THICK FILMS; ZIRCONIUM; ZIRCONIUM ALLOYS; ZIRCONIUM COMPOUNDS;

A STABLES; AMIDE COMPLEXES; AMORPHOUS; APPLICATIONS.; ATOMIC FORCES; BULK VALUES; C FILMS; CAPACITOR STRUCTURES; CHELATING LIGANDS; CRYSTALLINE FILMS; ELECTRICAL PROPERTIES; FILM DEPOSITIONS; GATE OXIDES; HIGH-K DIELECTRICS; MALONATES; MOCVD; MOCVD REACTORS; MONOMERIC COMPLEXES; NOVEL PRECURSORS; RELATIVE DIELECTRIC PERMITTIVITIES; THIN-FILMS; ZRO2;

AMORPHOUS FILMS;

EID: 33846625159     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200506481     Document Type: Article

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