Rate equations for 1.3-μm dots-under-a-well and dots-in-a-well self-assembled InAs-GaAs quantum-dot lasers

IEEE Journal of Quantum Electronics

Volumn 42, Issue 11, 2006, Pages 1175-1183

  Tong, C Z ^a   Yoon, S F ^a   Ngo, C Y ^a   Liu, C Y ^a   Loke, W K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Quantum dot (QD) laser; Rate equations; Semiconductor laser

Indexed keywords

CHARACTERISTIC TEMPERATURE; DOTS IN A WELLS; ENERGY LEVEL; GAAS; GAAS BARRIERS; HOLE CONFINEMENT; INAS; LAYER NUMBER; N-DOPED; OCCUPATION PROBABILITY; QD LASERS; QUANTUM DOTS; QUANTUM-DOT (QD) LASER; RATE EQUATIONS; RATE-EQUATION MODELS; ROOM TEMPERATURE; SATURATION VALUES; SELF-ASSEMBLED; STEADY STATE PERFORMANCE; THRESHOLD CONDITION;

GALLIUM ALLOYS; GALLIUM ARSENIDE; LASERS; PHOSPHORUS; QUANTUM CHEMISTRY; QUANTUM THEORY; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS;

EID: 33846614085     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.883471     Document Type: Article

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