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Volumn 85, Issue 20, 2004, Pages 4570-4572

Ultrafast electron capture into p-modulation-doped quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RELAXATION; QUANTUM DOT LASERS; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL); ULTRAFAST ELECTRON CAPTURE;

EID: 10944250560     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1815371     Document Type: Article
Times cited : (73)

References (25)
  • 17
    • 10944230893 scopus 로고    scopus 로고
    • note
    • For the same excitation conditions, the ground state emission in CWPL experiments is ≈2 times weaker in the doped QDs than the undoped QDs due to a faster measured recombination rate in the doped QDs. This is attributed to enhanced radiative recombination in the presence of the built-in carriers in the doped QDs.
  • 23
    • 10944223602 scopus 로고    scopus 로고
    • note
    • QD=2 (300 K), however, we verified that the measured rise times are independent of density over this range for experiments at 77 K [Fig. 3(a)] and 300 K (data not shown), and therefore this density variation will not influence the temperature-dependent results in Fig. 3(b).
  • 24
    • 10944241073 scopus 로고    scopus 로고
    • note
    • This lack of temperature dependence also suggests that electrons that may exist in barrier states due to state filling effects do not contribute significantly to the hole relaxation process.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.