Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal-organic vapor phase epitaxy

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 37-40

  Shioda, T ^a,b,c   Sugiyama, M ^a,c   Shimogaki, Y ^a,c   Nakano, Y ^a,b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A3. Growth models; A3. Metal organic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III V materials

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE;

GROWTH MODELS; SELECTIVE EPITAXY; SEMICONDUCTING III-V MATERIALS; VAPOR PHASE DIFFUSION;

INDIUM COMPOUNDS;

EID: 33846457395     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.004     Document Type: Article

References (18)

1. Coleman J.J., Lammert R.M., Osowski M.L., and Jones A.M. IEEE J. Sel. Top. Quantum Electron. 3 (1997) 874
2. Song H., Song X., Sugiyama M., Nakano Y., and Shimogaki Y. Electrochem. Solid State Lett. 9 (2006) G104
3. Sugiyama M., Waki N., Nobumori Y., Song H., Nakano T., Arakawa T., Nakano Y., and Shimogaki Y. J. Crystal Growth 287 (2006) 668
4. Song H., Song X., Sugiyama M., Nakano Y., and Shimogaki Y. J. Crystal Growth 287 (2006) 664
5. Waki N., Nakano T., Sugiyma M., Nakano Y., and Shimogaki Y. Thin Solid Films 498 (2006) 163
6. Sugiyama M., Oh H.J., Nakano Y., and Shimogaki Y. J. Crystal Growth 261 (2004) 411
7. Oh H.J., Sugiyama M., Nakano Y., and Shimogaki Y. J. Crystal Growth 261 (2004) 419
8. Oh H.J., Sugiyama M., Nakano Y., and Shimogaki Y. Jpn. J. Appl. Phys. 42 (2003) 6284
9. Oh H.J., Sugiyama M., Nakano Y., and Shimogaki Y. Jpn. J. Appl. Phys. 42 (2003) L1195
10. Oh H.J., Sugiyama M., Nakano Y., and Shimogaki Y. Jpn. J. Appl. Phys. 42 (2003) L359
11. H. Song, X. Song, M. Sugiyama, Y. Nakano, Y. Shimogaki, in: Proceeding of State-of-the-Art-Program on Compound Semiconductor and Processes at the Compound-Semiconductor/Solution Interface, PV 2005-04, The Electrochemical Society Proceedings Series, Pennington, NJ, 2005, p. 383.
12. Shioda T., Doi T., Al Amin A., Song X., Sugiyama M., Shimogaki Y., and Nakano Y. Thin Solid Films 498 (2006) 174
13. Gibbon M., Stagg J.P., Cureton C.G., Threush E.J., Jones C.J., Mallard R.E., Pritchard R.E., Collis N., and Chew A. Semicond. Sci. Technol. 8 (1993) 998
14. T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano, in: Proceedings of Indium Phosphide and Related Materials, IPRM'05, vol. 1, 2005, TP-16.
15. Greenspan J.E., Blaauw C., Emmerstorfer B., Glew R.W., and Shih I. J. Crystal Growth (2003) 405
16. Sakata Y., and Komatsu K. J. Electron. Mater. 29 (2000) 37
17. Yamaguchi K., and Okamoto K. Jpn. J. Appl. Phys. 32 (1993) 1523
18. Hata M., Isu T., Watanabe A., and Katayama Y. Appl. Phys. Lett. 56 (1990) 2542