Selective area movpe for GaAs on (100) misoriented substrates

Proceedings - Electrochemical Society

Volumn PV 2005-04, Issue , 2005, Pages 383-392

  Song, Haizheng ^a,c,d   Song, Xueliang ^b,c   Sugiyama, Masakazu ^a,c   Nakano, Yoshiaki ^b,c   Shimogaki, Yukihiro ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MISORIENTED SUBSTRATES; SURFACE MIGRATION;

COMPUTER SIMULATION; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; SURFACE PROPERTIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 31844448113     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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