The effect of group V precursor on selective area MOVPE of InP/ GaAs-related materials

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 419-426

  Oh, Ho Jin ^a,b   Sugiyama, Masakazu ^a,b   Nakano, Yoshiaki ^b,c   Shimogaki, Yukihiro ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Growth models; A1. Surface processes; A3. Metal organic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting indium phosphides

Indexed keywords

COMPUTER SIMULATION; DECOMPOSITION; INFRARED SPECTROMETERS; KINETIC THEORY; MASS TRANSFER; MATHEMATICAL MODELS; RATE CONSTANTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE REACTIONS; THERMODYNAMIC PROPERTIES; TOXICITY;

GROWTH MODELS; STICKING PROBABILITIES; SURFACE PROCESSES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0346154894     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.037     Document Type: Conference Paper

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