Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 411-418

  Sugiyama, Masakazu ^a,c   Oh, Ho Jin ^a,c   Nakano, Yoshiaki ^b,c   Shimogaki, Yukihiro ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Growth models; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting indium phosphides

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC DEVICES; DIELECTRIC FILMS; INTEGRATED OPTOELECTRONICS; MASKS; MONOLITHIC INTEGRATED CIRCUITS; NUCLEATION; OPTICAL MICROSCOPY; PARTIAL PRESSURE; POLYCRYSTALS; PROFILOMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

FILM PRECURSORS; GROWTH MODELS; MASK PATTERNS; SURFACE PROCESSES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0346154889     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.036     Document Type: Conference Paper

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