Factors determining the generation of polycrystalline growth over masks in selective-area metalorganic vapor phase epitaxy: Gas-phase concentration analysis

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 4 A, 2003, Pages

  Oh, Ho Jin ^a,c   Sugiyama, Masakazu ^a,c   Nakano, Yoshiaki ^b,c   Shimogaki, Yukihiro ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

GaAs; Gas phase diffusion; Metalorganic vapor phase epitaxy (MOVPE); Nucleation; Polycrystalline growth; Selective area growth

Indexed keywords

CRYSTAL GROWTH; DIFFUSION IN GASES; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; PRESSURE EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; SUBSTRATES;

GAS-PHASE CONCENTRATION ANALYSIS; GAS-PHASE DIFFUSION; POLYCRYSTALLINE GROWTH; SELECTIVE-AREA METALORGANIC VAPOR PHASE EPITAXY;

POLYCRYSTALS;

EID: 0037706958     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Letter

References (4)

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