Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 375-380

  Morel, A ^a   Gallart, M ^a   Taliercio, T ^a   Lefebvre, P ^a   Gil, B ^a   Allegre J ^a   Mathieu, H ^a   Damilano, B ^b   Grandjean, N ^b   Massies, J ^b  

^a UNIV MONTPELLIER   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; ELECTRON ENERGY LEVELS; ELECTRONS; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PHOTONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; X RAY DIFFRACTION ANALYSIS;

EMISSION ENERGY; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; RADIATIVE RECOMBINATION; TIME RESOLVED SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034226356     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<375::AID-PSSA375>3.0.CO;2-F     Document Type: Article

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