Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 A, 1999, Pages

  Damilano, Benjamin ^a   Vezian, Stephane ^a   Grandjean, Nicolas ^a   Massies, Jean ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

CARRIER LOCALIZATION; GALLIUM INDIUM NITRIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033317002     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1357     Document Type: Article

References (14)