Optical properties of hexagonal and cubic GaN self-assembled quantum dots

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1173-1176

  Cho, Yong Hoon ^a   Kwon, B J ^a   Barjon, J ^b,c   Brault, J ^b,c   Daudin, B ^b,c   Mariette, H ^b,c   Dang, Le Si ^b,c  

^a Chungbuk National University   (South Korea)

^b CEA GRENOBLE   (France)

^c LIPHY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; CARRIER LOCALIZATION; EMISSION ENERGIES; GAN-QUANTUM WELLS; INCREASING TEMPERATURES; OPTICAL CHARACTERISTICS; PL EXCITATIONS; SELF ASSEMBLED QUANTUM DOTS;

ELECTRIC FIELDS; EXPERIMENTS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE;

EID: 33846425284     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303032     Document Type: Conference Paper

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