Electronic structure of piezoelectric In0.2Ga0.8N quantum dots in GaN calculated using a tight-binding method

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 15, Issue 3, 2002, Pages 169-181

  Saito, T ^a,c   Arakawa, Y ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Electronic structure; InGaN; Piezoelectric field; Quantum dot; Tight binding method

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; FINITE DIFFERENCE METHOD; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PIEZOELECTRIC MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS;

PIEZOELECTRIC FIELD;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036836336     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00515-5     Document Type: Article

References (29)