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Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 69-74

On the dynamics of InGaN dot formation by RF-MBE growth

(6) Yamaguchi, Tomohiro a Einfeldt, Sven a Figge, Stephan a Kruse, Carsten a Roder, Claudia a Hommel, Detlef a

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM NITRIDE; HEAT TREATMENT; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DOT STRUCTURE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION (RHEED); STRAIN RELAXATION; SUBSTRATE TEMPERATURES;

EPITAXIAL GROWTH;

EID: 23844554497 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (7)

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