The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 731-735

  Chen, Z Z ^a   Liu, P ^a   Qi, S L ^a   Xu, K ^a   Qin, Z X ^a   Tong, Y Z ^a   Yu, T J ^a   Hu, X D ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A1. Optical microscopy; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

BLUE FLOCCULES; ELECTROLUMINESCENCE SPECTRUM; PIEZOELECTRIC FIELD; RECOMBINATION MECHANISM;

LIGHT EMITTING DIODES;

EID: 33846437834     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.167     Document Type: Article

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