The study of modified layers in SiCOH dielectrics using spectroscopic ellipsometry

Materials Research Society Symposium - Proceedings

Volumn 766, Issue , 2003, Pages 235-239

  Worsley, Marcus A ^a   Bent, Stacey F ^a   Gates, Stephen M ^b   Kumar, Kaushik ^b   Dalton, Timothy ^b   Hedrick, Jeffrey C ^b  

^a Stanford University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL MODIFICATION; COMPOSITE MATERIALS; DOPING (ADDITIVES); ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; PLASMAS; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON DEFICIENT LAYER; MODIFIED LAYER; NITROGEN DOPED LAYER; ORGANOSILICATE GLASS; PLANARIZATION; SPECTROSCOPIC ELLIPSOMETRY;

DIELECTRIC MATERIALS;

EID: 0346938392     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-766-e3.29     Document Type: Conference Paper

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