-
2
-
-
19144368382
-
-
b) D. Reisinger, P. Majewski, M. Opel, L. Alff, R. Gross, Appl. Phys. Lett. 2004, 55, 4980.
-
(2004)
Appl. Phys. Lett
, vol.55
, pp. 4980
-
-
Reisinger, D.1
Majewski, P.2
Opel, M.3
Alff, L.4
Gross, R.5
-
3
-
-
0001611672
-
-
c) X. W. Li, A. Gupta, G. Xiao, W. Qian, V. P. Dravid, Appl. Phys. Lett. 1998, 73, 3282.
-
(1998)
Appl. Phys. Lett
, vol.73
, pp. 3282
-
-
Li, X.W.1
Gupta, A.2
Xiao, G.3
Qian, W.4
Dravid, V.P.5
-
4
-
-
20844456747
-
-
M. Ishikawa, H. Tanaka, T. Kawai, Appl. Phys. Lett. 2005, 86, 222 504.
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 222-504
-
-
Ishikawa, M.1
Tanaka, H.2
Kawai, T.3
-
5
-
-
33846162381
-
-
APBs are spontaneous defects occurring during film growth due to different nucleation configurations
-
APBs are spontaneous defects occurring during film growth due to different nucleation configurations.
-
-
-
-
6
-
-
4243756158
-
-
a) D. T. Margulies, F. T. Parker, M. L. Rudee, F. E. Spada, J. N. Chapman, P. R. Aitchison, A. E. Berkowitz, Phys. Rev. Lett. 1997, 79, 5162.
-
(1997)
Phys. Rev. Lett
, vol.79
, pp. 5162
-
-
Margulies, D.T.1
Parker, F.T.2
Rudee, M.L.3
Spada, F.E.4
Chapman, J.N.5
Aitchison, P.R.6
Berkowitz, A.E.7
-
7
-
-
0037113425
-
-
b) W. Eerenstein, T. T. M. Palstra, T. Hibma, S. Celotto, Phys. Rev. B: Condens. Matter Mater. Phys. 2002, 66, 201101.
-
(2002)
Phys. Rev. B: Condens. Matter Mater. Phys
, vol.66
, pp. 201101
-
-
Eerenstein, W.1
Palstra, T.T.M.2
Hibma, T.3
Celotto, S.4
-
8
-
-
0001231254
-
-
c) W. Eerenstein, T. T. M. Palstra, S. S. Saxena, T. Hibna, Phys. Rev. Lett. 2002, 88, 247 204.
-
(2002)
Phys. Rev. Lett
, vol.88
, pp. 247-204
-
-
Eerenstein, W.1
Palstra, T.T.M.2
Saxena, S.S.3
Hibna, T.4
-
9
-
-
17644419774
-
-
J. M. D. Coey, A. E. Berkowitz, L. Balcells, F. F. Putris, F. T. Parker, Appl. Phys. Lett. 1998, 72, 734.
-
(1998)
Appl. Phys. Lett
, vol.72
, pp. 734
-
-
Coey, J.M.D.1
Berkowitz, A.E.2
Balcells, L.3
Putris, F.F.4
Parker, F.T.5
-
10
-
-
24344474914
-
-
H. Li, Y. Wu, Z. Guo, S. Wang, K. L. Teo, T. Veres, Appl. Phys. Lett. 2005, 86, 252 507.
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 252-507
-
-
Li, H.1
Wu, Y.2
Guo, Z.3
Wang, S.4
Teo, K.L.5
Veres, T.6
-
11
-
-
27744498569
-
-
C. Terrier, M. Abid, C. Arm, S. Serrano-Guisan, L. Gravier, J-Ph. Ansermet, J. Appl. Phys. 2005, 98, 086102.
-
(2005)
J. Appl. Phys
, vol.98
, pp. 086102
-
-
Terrier, C.1
Abid, M.2
Arm, C.3
Serrano-Guisan, S.4
Gravier, L.5
Ansermet, J.-P.6
-
12
-
-
0037022410
-
-
X. Liu, L. Lei Fu, S. Hong, V. P. Dravid, C. A. Mirkin, Adv. Mater. 2002, 14, 231.
-
(2002)
Adv. Mater
, vol.14
, pp. 231
-
-
Liu, X.1
Lei Fu, L.2
Hong, S.3
Dravid, V.P.4
Mirkin, C.A.5
-
13
-
-
0030265213
-
-
J. G. King, W. Williams, C. D. W. Wilkinson, S. McVitie, J. N. Chapman, Geophys. Res. Lett. 1996, 23, 2847.
-
(1996)
Geophys. Res. Lett
, vol.23
, pp. 2847
-
-
King, J.G.1
Williams, W.2
Wilkinson, C.D.W.3
McVitie, S.4
Chapman, J.N.5
-
14
-
-
1142293215
-
-
a) J. Wang, Q. Chen, C. Zeng, B. Hou, Adv. Mater. 2004, 16, 137.
-
(2004)
Adv. Mater
, vol.16
, pp. 137
-
-
Wang, J.1
Chen, Q.2
Zeng, C.3
Hou, B.4
-
15
-
-
33745750479
-
-
b) Z.-M. Liao, Y.-D. Li, J. Xu, J.-M. Zhang, K. Xia, D.-P. Yu, Nano Lett. 2006, 6, 1087.
-
(2006)
Nano Lett
, vol.6
, pp. 1087
-
-
Liao, Z.-M.1
Li, Y.-D.2
Xu, J.3
Zhang, J.-M.4
Xia, K.5
Yu, D.-P.6
-
16
-
-
9644263923
-
-
D. Zhang, Z. Liu, S. Han, C. Li, B. Lei, M. P. Stewart, J. M. Tour, C. Zhou, Nano Lett. 2004, 4, 2151.
-
(2004)
Nano Lett
, vol.4
, pp. 2151
-
-
Zhang, D.1
Liu, Z.2
Han, S.3
Li, C.4
Lei, B.5
Stewart, M.P.6
Tour, J.M.7
Zhou, C.8
-
17
-
-
20644456501
-
-
a) O. Céspedes, E. Clifford, J. M. D. Coey, J. Appl. Phys. 2005, 97, 064305.
-
(2005)
J. Appl. Phys
, vol.97
, pp. 064305
-
-
Céspedes, O.1
Clifford, E.2
Coey, J.M.D.3
-
18
-
-
24344458532
-
-
b) O. Céspedes, S. M. Watts, J. M. D. Coey, K. Dörr, M. Ziese, Appl. Phys. Lett. 2005, 87, 083 102.
-
(2005)
Appl. Phys. Lett
, vol.87
, pp. 083-102
-
-
Céspedes, O.1
Watts, S.M.2
Coey, J.M.D.3
Dörr, K.4
Ziese, M.5
-
19
-
-
20144364230
-
-
T. Arnal, R. Soulimane, A. Aassime, M. Bibes, Ph. Lecoeur, A. M. Haghiri-Gosnet, B. Mercey, A. V. Khvalkovskii, A. K. Zvezdin, K. A. Zvezdin, Microelectron. Eng. 2005, 78-79, 201.
-
(2005)
Microelectron. Eng
, vol.78-79
, pp. 201
-
-
Arnal, T.1
Soulimane, R.2
Aassime, A.3
Bibes, M.4
Lecoeur, P.5
Haghiri-Gosnet, A.M.6
Mercey, B.7
Khvalkovskii, A.V.8
Zvezdin, A.K.9
Zvezdin, K.A.10
-
20
-
-
0342908968
-
-
a) J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, J. Bennett, Appl. Phys. Lett. 1990, 56, 2001.
-
(2001)
Appl. Phys. Lett
, vol.1990
, pp. 56
-
-
Dagata, J.A.1
Schneir, J.2
Harary, H.H.3
Evans, C.J.4
Postek, M.T.5
Bennett, J.6
-
21
-
-
0032607946
-
-
b) R. Garcia, M. Calleja, H. J. Rohrer, J. Appl. Phys. 1999, 86, 1898.
-
(1999)
J. Appl. Phys
, vol.86
, pp. 1898
-
-
Garcia, R.1
Calleja, M.2
Rohrer, H.J.3
-
24
-
-
0035796736
-
-
c) V. Bouchiat, M. Faucher, C. Thirion, W. Wernsdorfer, T. Fournier, B. Pannetier, Appl. Phys. Lett. 2001, 79, 123.
-
(2001)
Appl. Phys. Lett
, vol.79
, pp. 123
-
-
Bouchiat, V.1
Faucher, M.2
Thirion, C.3
Wernsdorfer, W.4
Fournier, T.5
Pannetier, B.6
-
25
-
-
29044443869
-
-
and references therein
-
a) A. A. Tseng, A. Notargiacomo, T. P. Chen, J. Vac. Sci. Technol. B 2005, 23, 877, and references therein.
-
(2005)
J. Vac. Sci. Technol. B
, vol.23
, pp. 877
-
-
Tseng, A.A.1
Notargiacomo, A.2
Chen, T.P.3
-
26
-
-
33645411896
-
-
and references therein
-
b) R. Garcia, R. V. Martinez, J. Martinez, Chem. Soc. Rev. 2006, 35, 29, and references therein.
-
(2006)
Chem. Soc. Rev
, vol.35
, pp. 29
-
-
Garcia, R.1
Martinez, R.V.2
Martinez, J.3
-
27
-
-
0001483194
-
-
a) I. Song, B. M. Kim, G. Park, Appl. Phys. Lett. 2000, 70, 601.
-
(2000)
Appl. Phys. Lett
, vol.70
, pp. 601
-
-
Song, I.1
Kim, B.M.2
Park, G.3
-
28
-
-
0037065056
-
-
b) L. Pellegrino, I. Pallecchi, D. Marré, E. Bellingeri, A. S. Siri, Appl. Phys. Lett. 2002, 81, 3849.
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 3849
-
-
Pellegrino, L.1
Pallecchi, I.2
Marré, D.3
Bellingeri, E.4
Siri, A.S.5
-
29
-
-
0346846578
-
-
c) I. Pallecchi, L. Pellegrino, E. Bellingeri, A. S. Siri, D. Marré, Appl. Phys. Lett. 2003, 94, 4435.
-
(2003)
Appl. Phys. Lett
, vol.94
, pp. 4435
-
-
Pallecchi, I.1
Pellegrino, L.2
Bellingeri, E.3
Siri, A.S.4
Marré, D.5
-
30
-
-
2942637846
-
-
d) R. Li, T. Kanki, H.-A. Tohyama, J. Zhang, H. Tanaka, A. Takagi, T. Matsumoto, T. Kawai, J. Appl. Phys. 2004, 95, 7091.
-
(2004)
J. Appl. Phys
, vol.95
, pp. 7091
-
-
Li, R.1
Kanki, T.2
Tohyama, H.-A.3
Zhang, J.4
Tanaka, H.5
Takagi, A.6
Matsumoto, T.7
Kawai, T.8
-
31
-
-
4944262723
-
-
M. Hirooka, H. Tanaka, R. Li, T. Kawai, Appl. Phys. Lett. 2004, 85, 1811.
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 1811
-
-
Hirooka, M.1
Tanaka, H.2
Li, R.3
Kawai, T.4
-
32
-
-
36449008633
-
-
a) A. Majumdar, P. I. Oden, J. P. Carrejo, L. A. Nagahara, J. J. Graham, J. Alexander, Appl. Phys. Lett. 1992, 61, 2293.
-
(1992)
Appl. Phys. Lett
, vol.61
, pp. 2293
-
-
Majumdar, A.1
Oden, P.I.2
Carrejo, J.P.3
Nagahara, L.A.4
Graham, J.J.5
Alexander, J.6
-
33
-
-
0000534196
-
-
b) K. Wilder, C. F. Quate, D. Adderton, R. Bernstein, V. Elings, Appl. Phys. Lett. 1998, 73, 2527.
-
(1998)
Appl. Phys. Lett
, vol.73
, pp. 2527
-
-
Wilder, K.1
Quate, C.F.2
Adderton, D.3
Bernstein, R.4
Elings, V.5
-
34
-
-
0032159759
-
-
S. Hu, A. Hamidi, S. Altmeyer, T. Köster, B. Spangenberg, H. Kurz, J. Vac. Sci. Technol. B 1998, 16, 2822.
-
(1998)
J. Vac. Sci. Technol. B
, vol.16
, pp. 2822
-
-
Hu, S.1
Hamidi, A.2
Altmeyer, S.3
Köster, T.4
Spangenberg, B.5
Kurz, H.6
-
35
-
-
0037022409
-
-
M. Rolandi, C. F. Quate, H. Dai, Adv. Mater. 2002, 14, 191.
-
(2002)
Adv. Mater
, vol.14
, pp. 191
-
-
Rolandi, M.1
Quate, C.F.2
Dai, H.3
-
36
-
-
23944451614
-
-
L. Pellegrino, E. Bellingeri, A. S. Siri, D. Marré Appl. Phys. Lett. 2005, 87, 064 102.
-
(2005)
Appl. Phys. Lett
, vol.87
, pp. 064-102
-
-
Pellegrino, L.1
Bellingeri, E.2
Siri, A.S.3
Marré, D.4
-
37
-
-
33846123065
-
-
We do not know if a few clusters of Mo are left on the FMO surface; however, this fact might not be critical for most applications
-
We do not know if a few clusters of Mo are left on the FMO surface; however, this fact might not be critical for most applications.
-
-
-
-
38
-
-
33846146788
-
-
Although Mo and MoO3 features can be removed using a KI/I 2/H2O solution, modification of FMO regions under the biased AFM tip cannot be excluded, preventing the use of the same area for successive device fabrication
-
2O solution, modification of FMO regions under the biased AFM tip cannot be excluded, preventing the use of the same area for successive device fabrication.
-
-
-
-
39
-
-
0037436499
-
-
J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, R. Ramesh, Science 2003, 299, 1719.
-
(2003)
Science
, vol.299
, pp. 1719
-
-
Wang, J.1
Neaton, J.B.2
Zheng, H.3
Nagarajan, V.4
Ogale, S.B.5
Liu, B.6
Viehland, D.7
Vaithyanathan, V.8
Schlom, D.G.9
Waghmare, U.V.10
Spaldin, N.A.11
Rabe, K.M.12
Wuttig, M.13
Ramesh, R.14
-
40
-
-
33644560304
-
-
U. Lüders, M. Bibes, K. Bouzehouane, E. Jacquet, J-P. Contour, S. Fusil, J.-F. Bobo, J. Fontcuberta, A. Barthélémy, A. Fert, Appl. Phys. Lett. 2006, 88, 082 505.
-
(2006)
Appl. Phys. Lett
, vol.88
, pp. 082-505
-
-
Lüders, U.1
Bibes, M.2
Bouzehouane, K.3
Jacquet, E.4
Contour, J.-P.5
Fusil, S.6
Bobo, J.-F.7
Fontcuberta, J.8
Barthélémy, A.9
Fert, A.10
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