Magnetic nanowires patterned in the La2/3Sr 1/3MnO3 half-metal

Microelectronic Engineering

Volumn 78-79, Issue 1-4, 2005, Pages 201-205

  Arnal, T ^a   Soulimane, R ^a   Aassime, A ^a   Bibes, M ^a   Lecoeur, Ph ^a   Haghiri Gosnet, A M ^a   Mercey, B ^b   Khvalkovskii, A V ^c   Zvezdin, A K ^c   Zvezdin, K A ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b LABORATOIRE CRISMAT   (France)

^c PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

Electron beam lithography; Negative resist; Spintronics

Indexed keywords

ANNEALING; ASPECT RATIO; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; FERROMAGNETIC MATERIALS; LANTHANUM COMPOUNDS; NANOTECHNOLOGY; NEGATIVE RESISTANCE; OPTICAL RESOLVING POWER; PATTERN RECOGNITION; SENSITIVITY ANALYSIS;

AMORPHOUS STRUCTURES; MAGNETIC NANOWIRES; SPIN POLARIZATION; SPINTRONICS;

NANOSTRUCTURED MATERIALS;

EID: 20144364230     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.12.027     Document Type: Conference Paper

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