AFM fabrication of sub-10-nanometer metal-oxide devices with in situ control of electrical properties

Science

Volumn 270, Issue 5242, 1995, Pages 1639-1641

  Snow, E S ^a   Campbell, P M ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001143590     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.270.5242.1639     Document Type: Article

References (14)

1. M. Isaacson and A. Murray, J. Vac. Sci. Technol. 19, 1117 (1981); E. S. Snow, W. H. Juan, S. W. Pang, P. M. Campbell, Appl. Phys. Lett. 66, 1729 (1995).
2. M. Isaacson and A. Murray, J. Vac. Sci. Technol. 19, 1117 (1981); E. S. Snow, W. H. Juan, S. W. Pang, P. M. Campbell, Appl. Phys. Lett. 66, 1729 (1995).
3. E. S. Snow and P. M. Campbell, Appl. Phys. Lett. 64, 1932 (1994).
4. S. C. Minne, H. T. Soh, Ph. Flueckiger, C. F. Quate, ibid. 66, 703 (1995); P. M. Campbell, E. S. Snow, P. J. McMarr, ibid., p. 1388.
5. S. C. Minne, H. T. Soh, Ph. Flueckiger, C. F. Quate, ibid. 66, 703 (1995); P. M. Campbell, E. S. Snow, P. J. McMarr, ibid., p. 1388.
6. J. A. Dagata et al., ibid. 56, 2001 (1990).
7. H. Sugimura, T. Uchida, N. Kitamura, H. Masuhara, Jpn. J. Appl. Phys. 32, L553 (1993).
8. K. Matsumoto et al., ibid. 34, 1387 (1995).
9. K. Matsumoto, paper presented at the 53rd Device Research Conference, Charlottesville, VA, 20 June 1995.
10. Measurements of resistance versus thickness indicate that about half of the 7-nm-thick Ti film oxidizes after prolonged exposure to air, which leaves an electrically active layer 3 to 4 nm thick.
11. H. Sugimura, T. Uchida, N. Kitamura, H. Masuhara, Appl. Phys. Lett. 63, 1288 (1993); E. S. Snow and P. M. Campbell, in Fabrication and Patterning at the Nanoscale F. Cerrina and C. Maman, Eds. (Material Research Society, Pittsburgh, PA, 1995), vol. 380, p. 131.
12. H. Sugimura, T. Uchida, N. Kitamura, H. Masuhara, Appl. Phys. Lett. 63, 1288 (1993); E. S. Snow and P. M. Campbell, in Fabrication and Patterning at the Nanoscale F. Cerrina and C. Maman, Eds. (Material Research Society, Pittsburgh, PA, 1995), vol. 380, p. 131.
13. The exact dimensions of the wire are obscured by several effects. First, the AFM image indicates a rounding of ∼20 nm in radius at the edges of the oxide; this rounding is the result of both an actual rounding of the oxide edge and tip convolution effects. Second, the profile of the oxide below the surface is unknown. These effects lead to an uncertainty in the width of the electrically active region. In this size regime, the electrical measurements appear to be the more accurate estimate of the width. For constrictions down to 10 to 20 nm, the resistance data are well fit assuming the wire width decreases linearly with time. Consequently, we take as our estimate of the width the value established by the resistance.
14. J. I. Pascual et al., Science 267, 1793 (1995).