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Volumn 89, Issue 26, 2006, Pages

Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p-type GaN

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CERIUM COMPOUNDS; GALLIUM NITRIDE; MASS SPECTROMETRY; OHMIC CONTACTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALED CONTACTS; BAND BENDING; CAPACITANCE-VOLTAGE DATA;

INDIUM COMPOUNDS;

EID: 33846093036 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2424660 Document Type: Article

Times cited : (16)

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