Fabrication of high-lumen InGaN flip chip LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5187, Issue , 2004, Pages 260-266

  Venugopalan, H S ^a   Gao, X ^a   Zhang, T ^a   Shelton, B S ^a   DiCarlo, A ^a   Eliashevich, I ^a   Hsing, M ^b  

^a GELcore LLC   (United States)

^b GELcore LLC   (United States)

Author keywords

Current spreading; Flip chip; InGaN LED; N contact; Reflecting contact

Indexed keywords

DIFFUSION; ELECTRIC CURRENTS; ELECTRIC LAMPS; FABRICATION; FLIP CHIP DEVICES; GALLIUM NITRIDE; QUANTUM EFFICIENCY; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; SILVER; TRANSPARENCY;

CURRENT SPREADING; INGAN LED; N-CONTACTS; REFLECTING CONTACTS;

LIGHT EMITTING DIODES;

EID: 1842789819     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.514073     Document Type: Conference Paper

References (2)

1. J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Gardner, R. S. Kern, and S. A. Stockman, "High-power AlGaInN light-emitting diodes", Applied Physics Letters, 78 [22], 3379-3381 (2001).
2. H. S. Venugopalan, A. DiCarlo, X. Gao, S. Libon, B. S. Shelton, E. Stefanov, T. Zhang, I. Eliashevich, S. E. Weaver, M. Hsing, B. Kolodin, T. Soules, D. Florescu, S. Guo, M. Pophristic, and B. Peres, "Ultraviolet nitride LED fabrication for high-flux white LED", in Light-Emitting Diodes: Research, Manufacturing and Applications VII (eds. E. F. Schubert, H. W. Yao, and K. J. Linden), Proceedings of SPIE, 4996, 195-202 (2003).