Current conduction mechanisms in post-nitridation rapid-thermal-annealed gate oxides on 4H silicon carbide

Applied Physics Letters

Volumn 87, Issue 21, 2005, Pages 1-3

  Cheong, Kuan Yew ^a   Bahng, Wook ^b   Kim, Nam Kyun ^b  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SILICON CARBIDE; SUBSTRATES;

ELECTRON TRAP CENTER; INTERFACE TRAP DENSITY;

ELECTRIC CURRENTS;

EID: 27844505689     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2130522     Document Type: Article

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